High-Power Density DC-DC Converters Using Highly-Integrated Half-Bridge GaN ICs

This work develops high-power density DC-DC converters by combining monolithically integrated lowvoltage half-bridge GaN ICs with two advanced packaging approaches. An in-house fabricated monolithically integrated half-bridge with application-specific gate width ratio is investigated. The halfbridge GaN ICs are assembled and compared using both PCB-embedding and flip-chip assemblies. Finally, DC-DC converters with a max. power of 30 W and power density of >1000 W/in(exp 3) are realized by combing these GaN Power ICs and advanced packaging tecnologies.