A Novel Trench SiC-MOSFETs Fabricated by Multiple-Ion-Implantation into Tilted Trench Side Walls (MIT2-MOS)

We have developed the new trench gate SiC MOSFET(MIT2-MOS) applying bottom p-well region (BPW), sidewall connection region (SC) between p-well (PW) and BPW, and JFET doping region (JD). The structure has been fabricated by utilizing multiple ion implantations with tilted beam angle after trench etching. MIT2-MOS demonstrates markedly low Ron,sp of 1.9 mOmegacm2 at Vth of 4.1 V with breakdown voltage of 1500 V. The stability of Ron,sp and switching losses after the gate stress is also evaluated. Vth shifted about +0.23 V, Ron,sp increases below +2%, and total switching loss (Eon+Eoff) is stable.