Internal Thermoelectric Cooling in Nanosheet Gate-All-Around FETs Using Schottky Drain Contacts

Nanosheet gate-all-around field-effect transistors (NS GAAFETs) suffer from self-heating effects (SHEs), degrading their performance. This work demonstrates that using a Schottky barrier drain contact facilitates simultaneous optimization of the thermal resistance (
$R_{{\text {th}}}$
) and ON-current, leading to both ameliorated device performance and thermal reliability. Synopsis Sentaurus TCAD results delineate that thermoelectric cooling at the Schottky drain alleviates the SHEs reducing the maximum lattice temperature (
${T}\,_{L}^{{\text {max}}}$
) of up to 20.12 K compared to that at an ohmic drain contact.