Si/SnS2 Vertical Heterojunction Tunneling Transistor with Ionic-Liquid Gate for Ultra-Low Power Application

In this work, a novel Si/SnS2 vertical heterojunction tunneling transistor (HTFET) with ionic-liquid gate is proposed and experimentally demonstrated. Si/SnS2 tunnel junction behaves nearly-broken band alignment with effective tunneling potential height of only 0.17 eV, which is beneficial for the on-state current. Besides, due to the mature doping and contact technology of Si, excellent contacts between Si/SnS
₂
and metal electrodes can be achieved. Moreover, the organic electrolyte (PEO: LiClO
₄
=9: 1) is adopted as ionic-liquid gate stack and the electric double-layer structure formed by the anion and cation migration in the organic electrolyte can enhance the electrostatic control and optimize the subthreshold swing of the device.