Performance Evolution of the GaAs1-xSbx FinFET for the Mole Fraction Variation

In this paper, impact of the mole fraction variation in device performance of III-V material based GaAs_1-xSb_x - FinFET has been investigated. Mole fraction variability influence the physical property of the compound material and hence significantly affect the performance of the device. Device electrical property such as electron density and mobility variation has been studied as a function of mole fraction. In addition to that device DC performance such as I_ON/I_OFF ratio, transconductance, threshold voltage and device node capacitance e.g. C_gg and C_ds have been also investigated with the help of a TCAD simulator. Simulation results claim that mole fraction could be a deciding factor for III-V ternary material for the low and high performance circuit applications.