Comparative study on Analog & RF Parameter of InAlN/AlN/GaN Normally off HEMTs with and without AlGaN Back Barrier

In this work, we have made a relative assessment of lattice-matched In
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Al
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N/AlN/GaN normally off HEMT device with AlGaN back-barrier (BB) and without back-barrier by using device simulator. The utility of AlGaN BB on the said E-HEMT relaxes the channel, which reduces the short channel effects. It also reduces the total gate capacitance and simultaneously improves the cut- off frequency. The numerical modelings are done by the 2Dimenssional TCAD by means of HD mobility and matched with the previously accepted experimental result. Different device parameters are analyzed and compared with BB and without BB with the help of the numerical modeling. AlGaN back-barrier has further benefits in device parameters with comparison to without back-barrier i.e. less total gate capacitance and higher cut-off frequency. These outcomes prove the utility of proposed BB in such E-Mode GaN HEMTs can be a substitute way out in support of high power along with high-frequency purposes.