Effect of Drain Engineering on DC and RF Characteristics in Ge-source SD-ZHP-TFET

In this paper, a Ge-source is employed in split drain Z-shaped line TFET structure (SD-ZHP-TFET) and named as Ge-source SD-ZHP-TFET. The presence of split drain increases the tunnel width at interface of channel-drain, which reduces the ambipolar current (I
_AMB
). Also, the horizontal pocket at source region and the Ge-source boost the ON current (I
_ON
) of the SD-ZHP-TFET. A comparative study in terms of transfer characteristic and current ratio (I
_ON
/I
_OFF
and I
_ON
/I
_AMB
) among ZHP, SD-ZHP, and Ge-source SD-ZHP TFETs are highlighted through TCAD simulator. Furthermore, the impact of drain doping concentration of region 1 (N
_du
) and region 2 (N
_dl
) on transfer characteristic, I
_OFF
, and I
_AMB
are studied in proposed TFET. The Ge-source SD-ZHP-TFET provides I
_ON
/I
_OFF
and I
_ON
/I
_AMB
in the order of 10
⁹
and 10
¹¹
, respectively. Finally, RF/analog parameters like transconductance (g
_m
) and cut off frequency (f
_c
) is evaluated for Ge-source SD-ZHP-TFET.