Trapezoidal Channel Double Gate Tunnel FET Suitable for better Scalability, Speed and Low Power Application

The performance of a double gate TFET with trapezoidal shaped channel has been analyzed in this article. The proposed trapezoidal shaped double gate TFET (TDG-TFET) provides a better ON to OFF current ratio (I
_ON
/I
_OFF
) as well as an improved subthreshold swing (SS) in comparison with a conventional TFET. The performance analysis of the proposed TDG-TFET has been achieved by varying different important device parameters such as oxide thickness, drain voltage (VDS), channel length, gate work function and oxide thickness. For simulating purpose, SILVACO ATLAS has been considered. It can be observed that the achieved I
_ON
/I
_OFF
and SS is 10
¹³
and 23mv/decade at VDS 0.5V.