Ultra-Low Specific on-Resistance Achieved in 3.3 kV-Class SiC Superjunction MOSFET

We developed 3.3 kV-class silicon carbide superjunction (SJ) MOSFETs and demonstrated their excellent static and dynamic properties. The full-SJ device exhibited ultra-low RonA of 3.3 mΩcm² at room temperature (RT) and 6.2 mΩcm² at 175 °C. The small reverse recovery charge of SJ devices at RT and 175 °C was realized by injection level suppression. Owing to these advantages, superior total power loss was estimated when the SJ-devices were operated as a half-bridge synchronous rectifier.