Dual-Gate a-IGZO TFTs for Gate Driver Application

Nowadays, active matrix organic light emitting diodes (AMOLED) with higher resolution and narrower bezel can be achieved by using integrated gate driver on array (GOA) technology. In order to reduce the bezel width of displays more effectively, the width of GOA circuit needs to be reduced. In this paper, we study the transfer characteristics and output characteristics of dual-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by comparing with single gate TFTs. Dual gate TFTs exhibit high mobility and good PBTS reliability on Gen. 4.5 glass. Subsequently, we propose a gate driver on array (GOA) circuit by using dual gate TFTs to narrowing the width of GOA circuit layout. The GOA circuit was operated for 1020h under accelerating test conditions of 60 degrees Celsius, indicating high reliability of this GOA circuit.