Investigation of the Robustness of Nanoelectronic Structures Based on Resonant Tunneling Elements

We consider the problem of assessing the stability of nanoelectronic structures, which include resonant tunneling elements. Research shows that multi-input logic gates based on two-level logic cells MOBILE have a short (picosecond) switching time and higher functionality due to the ability to implement logic functions with fewer gates. This creates good prospects for the development of ultra-high-performance programmable logic device (PLD) with a high degree of integration, which are required for organizing high-performance computing. However, the extremely high sensitivity of resonant tunneling elements to changes in the energies of quantum states requires an assessment of the stability of such structures to external influences in real operation. For this purpose, a technique is proposed for investigating the robustness of logic cells MOBILE based on a resonant tunneling diode and an HBT transistor.