A 60 GHz High Gain Narrow-Band 150 nm InGaAs based Power Amplifier

The feasibility of inductorless two-stage common-source power amplifier (PA) based on 150nmInGaAs pHEMT devices is evaluated for narrow-band applications at ~60GHz. The PA uses carefully sized and shorted microstrip transmission lines in place of inductors for mm-wave operation. It achieves a maximum gain of 18 dB, an operating 3-dB bandwidth of 2.5 GHz at 62 GHz center frequency with a fractional bandwidth of 4%. The PAE and P
_-idB
are 11.8 % and 8.1 dBm, respectively. The area of the layout of the PA is 0.22 mm
²
. The power delivered by the amplifier is 12.8 dBm. The power consumed by the PA is 135 mW at a source voltage of 4 V. A comparison of performance of the proposed PA with alternative technologies shows that it wm be a viable option in 60 GHz circuit design for ultra-short secured wireless links expected to be prevalent in the next decade.