A Dual Hole Barriers IGBT with High dV/dt Controllability and Extreme Low EMI Noise

A dual hole barriers IGBT (DHB-IGBT) with high dV/dt controllability and extreme low EMI noise is proposed. The DHB-IGBT features an emitter side semi-superjunction (ESJ) and a carrier store (CS) layer to form the dual hole barriers (DHB), and hence suppresses the hole accumulation both under the gate oxide and in the floating-P region during the turn-on transient. This reduces the reverse displacement current that charges the gate capacitance, contributing to high dV/dt controllability and low EMI noise. Simulation results show that, when compared with the Fin-P IGBT and HP-IGBT, the DHB-IGBT delivers a comparable breakdown voltage while featuring a 65% and 69% lower dVKA/dt, respectively.