GaN Super-Heterojunction Schottky Barrier Diode with Over 10 kV Blocking Voltage

In this paper, we present GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with over 10 kV blocking voltage. Charge imbalance between the n-type delta doping and the p-type doping was adjusted by N⁺ implantation. This device structure enabled scaling of breakdown voltage to over 10 kV and with an on-resistance of 1054 Ω·mm.