Identifying relaxation and random telegraph noises in filamentary analog RRAM for neuromorphic computing

The comprehensive investigation of relaxation effect remains difficult. For the first time, a characterization scheme is proposed and demonstrated to identify the relaxation and RTN in filamentary analog RRAM devices. This new method can help deeply understand the physical mechanism of relaxation, and pave the way for developing analog RRAM devices with excellent stability. The identification of the relaxation and RTN also helps design diversified RRAM based deep neural networks with reasonable computing accuracy.