RF Reliability of Power RF N-LDMOS Devices under Pulsed Accelerated Aging Life Test

This paper experimental results by an innovative reliability bench for pulse RF life testing in radar application of device life under pulse conditions. And material clarifications for the phenomenon of failure. Results of accelerated aging stress are displayed with different temperatures (3000 hours at 150°C and 1O°C). Based on RF parameter shifts (Gain, Pout, Drain Efficiency: DE and Psat), the reliability of different tests was compared. To explain the effects of these theses according to the decomposition data, the prevailing physical acoustics concerned were studied and validated using the Silvaco-Atlas simulator. This supports finding a relationship between shifts of electrical parameters for radio frequencies to failed physical phenomena caused by impact ionization. The deterioration of N-LDMOS behavior is related to the hot carriers (traps) and trapped electrons, which leads to the accumulation of negative charge in the Si/SiO
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interface. At low temperature, interface states are created more, due to the maximum target impact ionization rate at the gate edge region. Finally, an analysis of the reliability of radio frequency behavior was discussed.