Theoretical Study of Negative Capacitance FinFET With Quasi-Antiferroelectric Material

In this work, a quasi-antiferroelectric (QAFE) model to precisely evaluate the electrical characteristics of negative capacitance Fin field-effect transistor (NC-FinFET) integrated with a QAFE gate insulator is proposed. A comparative study of the performance of transistors with ferroelectric (FE) and QAFE of different component ratios is carried out by combining the QAFE model and the BSIM-CMG model. The results demonstrate that the introduction of the QAFE gives rise to performance improvements than those of conventional FinFETs, which is ascribed to QAFE's negative slope segment of polarization ( P) versus voltage ( V) around P = 0 for the QAFE NC-FinFETs. Because of the induced negative gate charges due to fringing electric field ( E) coupling in the short channel of 3-D FinFET, subthreshold swing (SS) is just slightly lower than the tyrant limit of 60 mV/decade but a significant on-state current enhancement is found in the QAFE NC-FinFETs. The charge range, where the NC effect exists, shows a significant impact on the performance of the device due to the small remnant polarization of the QAFE layer. With the designed component ratio, a superior current enhancement can be obtained compared with the control device. This work provides a design guideline for the development of future high-speed and low-power NC-FinFET with QAFE material.