Reduced Drift of CMOS ISFET pH Sensors Using Graphene Sheets

Reduction of drift in Complementary Metal Oxide-Semiconductor (CMOS) Ion-Sensitive Field-Effect Transistor (ISFET) pH sensors is demonstrated using monolayer and multilayer graphene sheets. Graphene blocks the ion penetration in the CMOS passivation layers and provides the physisorption sites needed for electrical double layer formation allowing sensing. With an in-house polymer-assisted graphene transfer (PAGT) process, monolayer and multilayer graphene sheets were manually transferred on top of the sensing membrane of CMOS ISFET sensors on a 2 by 4 mm chip. Experiments with pH buffers on five different chips were performed to extract the average performance parameters of capacitive attenuation, trapped charge, sensitivity, drift and noise. The stretched exponential function, that describes dispersion processes in amorphous solids such as silicon dioxide and silicon nitride, was modified to model the dynamic drift behaviour and analyse the effect of graphene on the performance of the sensors. The results show that on average the graphene coated ISFET sensors experience about 50% reduction in drift amplitude, up to 3 times slower surface modification and perform overall better compared to the plain unmodified devices.