Is there a perfect SiC MosFETs Device on an imperfect crystal?

6” Silicon Carbide substrates contain more than 10000 crystal defects per cm
²
. A large fraction of those are embedded into active SiC device structures which may cause electrical failures, alter the device performance or significantly reduce the operating life time of individual devices. In this work we provide insights on cause and effect of several types of crystal defects and discuss approaches how to reduce their occurrence, investigate their degradation modes and strategies to eliminate affected dies.