Third Order Band Pass Filter With Double-Gate MOSFET: A Circuit Perspective

To achieve the signal of a particular range, a third order Band Pass Filter (BPF) has been realized for the Radio frequency (RF) applications. The mathematical analysis of the designed filter has been performed to determine the overall center frequency and bandwidth. Traditional components such as BJT and MOSFETs have increased power consumption and larger electronic package size. The application of Double-Gate (DG) MOSFET leads to performance and reliability improvement of the filter with a reduction in the device's size. The DG MOSFET has a smaller width and better gate control over the channel than the traditional MOSFET. This DG MOSFET also provides improved power efficiency and switching capabilities for the filter design.