Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices

The Reduced Surface Field (RESURF) technique has been adopted to GaN based edge termination structures and is illustrated using Technology Computer Aided Design (TCAD) on a semi-vertical pn junction diode. It is shown that with the introduction of an additional p-type RESURF layer, the breakdown voltage can be enhanced as in the classical RESURF technique. These edge termination structures can reach breakdown voltages close to the theoretical, parallel-plane breakdown voltage thereby avoiding lower corner breakdown voltages in standard structures without a RESURF layer.