Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination

In this letter, the ultrafast reverse recovery
β
-Ga
₂
O
₃
Schottky barrier diode (SBD) with improved breakdown voltage is proposed and investigated experimentally. It features the compound termination, consisting of air space field plate and thermal oxidation terminal. The compound termination not only reduces high-density interface states at the dielectric/Ga
₂
O
₃
interface and the electron concentration in the oxidation terminal, but also modulates the electric-field distribution and suppresses the peak electric-field at the bottom of anode. Therefore, the reverse leakage current is suppressed as well as the reverse recovery and breakdown characteristics are improved effectively. The Ga
₂
O
₃
SBDs with the diameter of 1000 μm obtain ultrashort reverse recovery time of 7.5 ns and ultralow reverse recovery charge of 1.0 nC at
di
/
dt
= 50 A/μs with its breakdown voltage up to 400 V, maintaining good rectification characteristics. The temperature-dependences of both forward conduction and reverse recovery characteristics are discussed in temperature range from 300 to 500 K. The results prove that the superior electronics performance of the
β
-Ga
₂
O
₃
SBDs with good electronics thermal tolerance can overcome the low thermal conductivity of
β
-Ga
₂
O
₃
to a certain extent. The fabricated
β
-Ga
₂
O
₃
SBDs have great potential for high power and high-frequency applications.