Wide-band Injection-Locked Frequency Dividers of Concurrent Oscillating RF Stress

This article studies the over-voltage stress effect on a dual-resonance divide-by-2 injection-locked frequency divider (ILFD). The ILFD consists of two sub-ILFDs coupled by magnetic field and it can operate in three modes with overlapped locking ranges. The outputs of ILFD can be measured at high-band and low-band buffers, the measured data on low-band buffer shows high figure of merit (FOM). Concurrent-oscillating over-voltage bias degrades both FETs in high-band and low-band sub-ILFDs and causes the degradation of the low-and high-band locking ranges. The degradation of the FOM evaluated at high-band buffer is severe, so better operation condition is to measure the output at low-band buffer for microwave applications.