Improved CMOS Inverter Characteristics of Junctionless FinFETs using Gaussian Doping

In this paper, the CMOS characteristics of Trigate Junctionless FinFETs has been improved using Gaussian doping. The proposed device shows better device electrical characteristics of potential distribution, threshold voltage and drive current of Trigate Gaussian doped Junctionless FinFETs than the uniform doping. The potential distribution has been developed from two-dimensional poisons equation using variable separation method. Further, the Gaussian doping reduces the short channel effects of subthreshold swing and Drain Induced Barrier Lowering (DIBL). The results show the better device characteristics of Trigate Junctionless FinFETs using Gaussian doping.