Robust Ultraviolet Photodetection by Tailored Polycrystalline In2O3 Nanowire Synthesized Using Glancing Angle Deposition

Perpendicular In₂O₃ nanowire (NW) arrays have been successfully synthesized using glancing angle deposition (GLAD) inside electron-beam evaporator on p-type Si substrate by tailoring the deposition rate and substrate rotation rate. The morphologies of as-deposited In₂O₃ NWs structures are studied using field emission scanning electron microscope and transmission electron microscopy. The growth mechanisms of In₂O₃ NWs are studied. In₂O₃ NW shows 1.5 times enhanced optical absorption in UV region compared to In₂O₃ thin film (TF). In₂O₃ NW shows more photoluminescence emission due to the increase in active surface area to volume ratio compared to bulk TF. The In₂O₃ NW shows low dark current conduction compared to In₂O₃ TF. In₂O₃ NW shows ~ 50 time enhanced photosensitivity than that of In₂O₃ TF at -5 V under 340 nm UV-illumination. In₂O₃ NW shows faster rise time (~0.6519 s) and fall time (~0.51 s) compared to In₂O₃ TF rise time (~1.519 s) and fall time (~0.543 s). In₂O₃ NW shows excellent detectivity of 9.91×10¹³ Jones and low noise equivalent power of 2.83×10^-13 W. Therefore, the remarkable optoelectronic properties attained with In₂O₃ NW will guarantee wider promising applications in electronic and optoelectronic devices.