Linearity of high Al-content AlGaN/GaN HEMTs

This work will address the advancements in the linearity of AlGaN/GaN HEMTs. This is the first reported linearity result for high-Al content devices, and it is the first reported result of linearity for nitride-based HEMTs under both transmitter and receiver types of conditions. When the device technology matures, it will have commercial and military applications in wireless base stations, satellite communications, and radar.