Quantitative prediction of threshold voltage fluctuations in sub-100 nm MOSFETs by a new dopant model

In the present paper, threshold voltage fluctuations in sub-100 nm MOSFETs are studied in a predictable manner by employing a new dopant model that explicitly splits the long-range and short-range potentials of dopants. The threshold voltage fluctuations have been investigated by 3-D drift-diffusion simulations. After demonstrating the validity of the present dopant model, the standard deviation of threshold voltages for sub-100 nm MOSFETs has been reliably estimated.