50 nm vertical surround gate MOSFET with S-factor of 75mV/dec

Vertical MOSFETs (VMOS) have the potential to improve short channel effects and to increase the integration density. Vertical replacement-gate (VRG) MOSFETs with 50 nm channel length on 300 nm Si wall and vertical sub-100 nm MOSFETs on MBE Si island by electric field tailing have been reported. In this paper, we report the fabrication and device characteristics along with simulation results of fully depleted vertical MOSFETs.