Silicon-Based Photodetector for Infrared Telecommunication Applications

In this work, the design and fabrication of a Cu/p-Si/Pt Schottky photodetector with a simple structure is investigated. The mechanism of electron flow is explained using internal photoemission theory, which is further applied to make the fabricated devices reach a high responsivity of 0.542 mA/W at 0–V bias. The investigation revealed that the rapid thermal annealing process could significantly influence the device characteristics. Variations in Schottky barrier height and series resistance of the photodetectors were also analyzed and correlated with the device responsivity. With proper conditions to improve the Pt/Si ohmic contact, the device performance can be enhanced.