Topologically Protected and Conventional Subbands in a 1T’ -MoS2 Nanoribbon Channel

Continuous miniaturization brought the feature size of silicon technology into the nanometer scale, where performance enhancement cannot be easily achieved by further feature size reduction. The use of new materials with advanced properties has become mandatory to meet the needs for higher performance at reduced power. Topological insulators possess highly conductive topologically protected edge states insensitive to scattering and thus suitable for energy efficient high speed devices. Here, we evaluate the subband structure in a nanoribbon of 1T'-MoS2 by applying an effective k·p Hamiltonian in a confined geometry.