Modeling and Simulation of PGSPAD-Based Silicon Photomultipliers

This article presents and develops a novel comprehensive simulation model for perimeter gated single-photon avalanche diode-based silicon photomultipliers (PGSPAD SiPMs). A PGSPAD is a modification of single-photon avalanche diodes (SPADs) that contains a third terminal to mitigate perimeter edge breakdown. It does this without excessively enlarging the device area. The applied gate voltage modulates the dynamic range, breakdown voltage, and dark current characteristics. The proposed PGSPAD SiPM model correctly mimics the current-voltage transfer function and the avalanche-quench process of the SiPM detector and is verified by the experimental measurements of a PGSPAD SiPM fabricated in a commercial 0.5- μm CMOS process. The model includes the dark current of the PGSPAD device. This was not included in previous SiPM models. The effect of the number of triggered microcells versus the total number of microcells and the impact of different parameters on the PGSPAD SiPM performance with added gate terminal are evaluated. The photon-electron spectrum with the effect of an extra gate terminal has been studied. Simulation results show very good agreement with experimental measurements.