Characterization of a bi-directional double-side double-gate IGBT fabricated by wafer bonding

A bi-directional double-side, double-gate IGBT fabricated through a direct wafer bonding process is characterized. As a result of the symmetrical geometry the transistors have lower V/sub CD(SAT)/, however, with the aid of the second MOS gate the switching dissipation is as low as that of the conventionally-gated reference IGBT. Overall, the DIGBT gives a V/sub CD/(sat)E-OFF trade-off improvement of 40% over the reference single-side IGBT.