High temperature characteristics of 5 kV, 20 A 4H-SiC PiN rectifiers

This paper reports the design, fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) mere used in order to get good on-state and stable blocking characteristics. A forward voltage drop of less than 5 V was observed at 500 A/cm/sup 2/ in the entire 25 to 225/spl deg/C temperature range. The reverse recovery characteristics show only a modest 50% increase in the peak reverse recovery current from 25/spl deg/C to 225/spl deg/C. Measurements at a forward current density of 150 A/cm/sup 2/ show that a four orders of magnitude reduction in Q/sub rr/ is obtained in 4H-SiC rectifiers as compared to comparably rated Si rectifiers.