Ku-Band 25 W High Power Amplifier using 0.25 µm GaN Technology

This paper presents a high power, high efficiency monolithic microwave integrated circuit (MMIC) amplifier developed using commercially available 0.25 μm AlGaN/GaN technology. Designing an upper Ku-band amplifier using moderate power density process, with fT = 30GHz, being a key challenge, the proposed three stage amplifier delivers 44 dBm output power over a frequency range of 13 GHz to 18 GHz. The small signal gain of the amplifier is 24 dB and 30 % power added efficiency (PAE). Chip size of the design is 4.65 mm x 4.6 mm.