Projected Reduction of Submillimeter Wave Mixer Noise at 77 K by the use of InSb Schottky Barrier Diodes

Because of its low effective mass, InSb exhibits a high electron mobility. Since a high conductivity would reduce the parasitic losses, this material has been proposed for Schottky-barrier mixer diodes in the submillimeter region. Progress in ultra-high-vacuum deposition techniques makes the construction of a rectifying barrier on N-type InSb now appear feasible. However, the expenditure that will be required to solve the interface problem makes a serious evaluation of the benefits of InSb over GaAs necessary.