Tunable Far-Infrared Source Based on Radiative Transitions between Landau-Levels in N-Type InSb

The radiative emission from impact ionized shallow donors in n-type InSb provides a tunable far-infrared source, the properties and applications of which are investigated. To obtain optimum conditions the radiation intensity is studied in dependence of the sample volume and the electric and magnetic field intensities. The source is applied to measure the Zeeman-splitting of the shallow donors in n-InP and n-G-aAs.