An Ultra-wideband High-Gain GaN Amplifier with 10 W Output Power

An ultra-wideband high-gain 10-W GaN power amplifier based on a 0.1-μm GaN HEMT process is illustrated in this paper. In order to achieve high power and high efficiency simultaneously, the triple-stacked GaN transistors are employed in a non-uniform distributed amplifier. In addition, a high-pass RLC filter structure to improve the stability of high-frequency for this PA is adopted. The measured results show that it exhibits a small-signal gain of 29 ± 2 dB, a saturated output power of about 10 W and an average power add efficiency greater than 23% across the 2 to 18 GHz band with a small die area of 2 × 3.5 mm².