Effect of Underlap with Fixed Gate Length: GaN-Based Double-Gate MOSFETs

The effect of gate length 8 nm with underlap of double-gate MOSFET has been designed for VLSI Technology. The evaluation process was followed by NEGF (non-equilibrium Green’s function) formalism using SILVACO ATLAS followed to ITRS- 2013. The investigations on the threshold voltage, Subthreshold Slope, ION, $I_{OFF}, I_{ON}/I_{OFF}$, DIBL, and switching characteristics of the electric field have been done with the simulation results. In the simulation, adopting symmetrical distances from the source to gate and gate to drain (S-G and G-D) by fixing the gate length identical are cited as underlap. Here, the observation has been done for LUN =(0 to 4 nm) underlap length. GaN and HfO2 have been chosen as channel material and dielectric material, respectively. The Proposed device structure indicates that GaN-based DG-MOSFETs for $L_{G}=S$ nm with various underlap lengths is a promising candidate for the aspect of modern VLSI applications.