High temperature annealing effects on the C-V and G-V characteristics of the n-channel enhancement mode power MOSFET device

The n-channel enhancement mode power MOSFET device studied in this work was exposed to extreme temperatures by annealing it in air at temperatures ranging from 100/spl deg/C to 400/spl deg/C for 30 minutes. High frequency capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were measured across the gate source terminals of the device after each annealing process. Significant effects were observed on the high frequency C-V and G-V curves only when the device was annealed at 400/spl deg/C. These measurements were also taken at different measurement temperatures ranging from room temperature to 175/spl deg/C on the nonannealed device and device annealed at 400/spl deg/C. The effects of measurement temperatures on the C-V and G-V characteristics of these samples were compared and analyzed. The device on exposure to this extreme temperature was observed to be still operational as a switching device with higher power output at the expense of a higher leakage current.