A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI starting substrates

Three CFET process flow options, starting with Si bulk, SOI or DSOI substrates respectively, were compared in their likelihood to experience process variation failures. This study was performed using virtual fabrication technologies, without requiring the fabrication of any actual test wafers. The SOI process flow option was identified as the most robust option among the three possibilities.