Shear Acoustic Phonons in AlN/GaN Nanostructures in the Presence of Piezoelectric Effect

The exact analytical solutions for coupled equations of elastic displacement and Maxwell's equations were derived using the model of an elastic and dielectric media. Based on these results, we developed a theory of shear acoustic phonons arising in the layers of the nitride semiconductor nanostructure in the presence of the piezoelectric effect. It allowed calculations f the shear acoustic phonons spectrum and its dependencies on the wave vector and the size of the total potential well of the nanostructure. The piezoelectric potential is calculated, taking into account the geometric dimensions of the nanostructure.