An investigation of Near-field Radiated Emission for Silicon Carbide Power Module in Buck Converter

Silicon carbide metal oxide semiconductor field effect transistor (SiC-MOSFET) power devices have the advantage in high-power and high-frequency applications over silicon insulated gate bipolar transistor (Si-IGBT), due to the superior properties of fast switching speed and low switching loss. In order to meet the requirements of the applications of higher power and higher switching frequency for power devices, the power module based high power density integration becomes the mainstream trend of the development of SiC devices, but the highly integration also increase the concern about the coupling failure by near-filed radiated emission due to fast switching performance of SiC power module. For this problem, in this paper a buck converter based on SiC power module with 62mm standard outline has been built, the near-filed radiated emission of the module has been investigated, and finally, the spectrum and spatial distribution of near-field radiated emission electromagnetic interference (EMI) of the module have been disclosed.