Modeling Time to Failure in Potential-Induced Degradation of Silicon Solar Modules based on Quantitative Sodium Kinetics

We present a physics-based simulation environment for the prediction of potential-induced-degradation (PID) failure time in silicon solar modules. Our model is based on experimental sodium migration kinetics obtained from our recently developed trap-corrected bias-stress-temperature method and from secondary ion mass spectrometry measurements. We model sodium migration to stacking faults and subsequent formation of conductive pathways through the p-n junction, which causes a decrease of the shunt resistance and loss of efficiency.