Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts

We apply silicon nanocrystals as a carrier transport route in silicon oxide for polycrystalline silicon on oxide (POLO) junctions. The Si nanocrystals are formed in silicon oxide by deposition of hydrogenated amorphous silicon oxide with different oxygen concentration and subsequent annealing. From cross-sectional transmission electron microscopy (TEM) images, the Si nanocrystals are observed for the sample at annealing temperature of 750 °C. The highest average effective lifetime of about 630 μs and contact resistivity of 25.5 mΩ·cm are obtained before hydrogenation process.