Role of Surface Recombination Velocity and Initial Fermi Level Offset on Bifacial Thin Film Devices

As the efficiency of single junction devices improve, bifacial thin film (BFT) devices are being increasingly investigated as a way to increase energy yield per unit area. At the same time, increasing doping density of thin film devices are also being developed to increase the energy yield per unit area. Here, we investigate how critical parameters to improving backside illuminated devices and increasing the absorber doping density affect backside illuminated device performance. We show that reducing recombination at the back of the device through increasing initial Fermi level offset (IFLO) or decreasing back surface recombination velocity (BSRV) is far more important than increasing absorber doping density. We also show that there is a wide range of the IFLO-BSRV parameter space that can lead to high backside illumination device efficiency for highly doped thin film devices.