Limit Temperature Coefficient in Silicon Solar Cells

The photoconversion efficiency and its temperature coefficient of silicon solar cells are investigated within the thin-base model with Lambertian light trapping. Fresnel reflection of the trapped photons from the front surface is accounted for in the absorptance expression. In the absence of extrinsic recombination mechanisms and parasitic resistance effects, the maximal efficiency under the AM1.5G illumination conditions at 25 ° C is 29.99% at the thickness 63.3 μm, with the temperature coefficient of 0.23% /K. Calculations performed for real solar cells revealed that the extrinsic recombination mechanisms, doping, and series resistance result in an increase of the temperature coefficient, whereas shunt resistance results in its reduction relative to the value obtained for an ideal solar cell.