Improving GaAsP/Si Tandem Solar Cells Using Silicon Passivated Contacts

The degradation of photocarrier bulk lifetime in Si wafer substrates during the heteroepitaxial growth of III-V materials has been widely reported and is known to limit the efficiency of III-V/Si tandem solar cells. There have been prior strategies to protect Si lifetime in III-V growth chambers, but most require the use of a protective layer that must be removed in subsequent device processing. It would be advantageous for protective layers to remain an active part of the device. In this work, we demonstrate that a polycrystalline silicon (poly-Si) passivated contact can protect the minority carrier lifetime of the Si base wafer during the organometallic vapor phase epitaxy of III-V materials on silicon substrates.