A Method to Model the Volume Charge Density in a Multiple-Input Floating-Gate MOS Transistor

We present a methodology to model the volume charge density in the substrate of the Multiple-input Floating-Gate MOS (MIFGMOS) transistor. This method considers the MIFGMOS as an analog CMOS device. We based our procedure on Maxwell's Equations through a Poisson Equation implementation on Matlab. The charges generated during the MIFGMOS polarization, which is made by applying voltages on the Control Gates (CG), are used to calculate electric fields, electric potentials, and finally, the volume charge density in the MIFGMOS transistor channel. Moreover, we introduce a method based on coordinates to generate a mathematical function to describe the electric-potential behavior on the substrate. Finally, we show the volume charge density behavior on three graphics, which allows us to predict regions in which will be a great amount of volume charge density, depending on the voltages of the terminals. The former reveals the relationship between control gates and volume charge density and will allow us to understand and analyze some superior order phenomena.