Research of High Frequency Drive Circuit for Motor Drive System Based on GaN Power Device

The use of gallium nitride (GaN) high-electron mobility transistors (HEMTs) is a promising solution to increase switching frequency of motor drive due to their high-switching speed and low on-state resistance. Unfortunately, high-speed switching characteristic of GaN HEMT generates high dv/dt and di/dt causing crosstalk and voltage oscillation. In this paper, equivalent circuit models incorporating all parasitic elements are developed for analyzing switching transient. It provides further insight on the effect of each parasitic element on crosstalk and voltage oscillation. Besides, some optimization methods based on this research are also proposed. The experimental results show that the proposed methods can suppress crosstalk and voltage oscillation and improve the stability of motor drive.