Fast migration of plasma-induced defects in p-InP

We investigated the electrical properties of plasma-induced defects in p-InP:Zn and discussed the migration mechanism of the defects. Two kinds of defects were responsible for the deactivation (or compensation) of the doped acceptors, when the sample was exposed to an Ar plasma. They migrate into the bulk region even at room temperature. One of them is tentatively identified as a hydrogen atom deliberately introduced into the crystal during processing. The other one consists of intrinsic point defect(s) due to displacement of constituent atoms. The intrinsic point defects could be frozen and become immobile at the surface by quenching at 77 K. The migration parameters for these defects are determined by performing reverse-bias-anneal (RBA) experiments in comparison with the simulation based on the defect reaction and drift-diffusion model.